Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2006-06-27

2006-06-27

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S759000, C257S763000, C257S764000

Reexamination Certificate

active

07067920

ABSTRACT:
A semiconductor device includes an upper wiring layer, a lower wiring layer, an electrically insulating layer sandwiched between the upper and lower wiring layers, a tungsten plug formed in a through-hole formed through the electrically insulating layer, for electrically connecting the upper and lower wiring layers to each other, a titanium film covering an inner surface of the through-hole and a surface of the electrically insulating layer therewith, a first titanium nitride film entirely covering the titanium film therewith, and a second titanium nitride film covering the first titanium nitride film and a surface of the tungsten plug therewith.

REFERENCES:
patent: 5990001 (1999-11-01), Oda
patent: 6326315 (2001-12-01), Uchiyama et al.
patent: 05-326511 (1993-12-01), None
patent: 11-087498 (1999-03-01), None
patent: 11-354519 (1999-12-01), None
patent: 2000-228446 (2000-08-01), None

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