Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

1995-05-01

1999-11-23

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257637, 257640, H01L 2358

Patent

active

059905417

ABSTRACT:
A semiconductor device comprising: a silicon nitride film formed on a semiconductor substrate having a first wiring layer; a first silicon oxide film formed on said silicon nitride film; and a second silicon oxide film formed on said first silicon oxide film by way of an atmospheric pressure CVD process using tetraethyl orthosilicate, siloxane, or disilazane as a source material.

REFERENCES:
patent: 5055427 (1991-10-01), Haskell
patent: 5258645 (1993-11-01), Sato
patent: 5285102 (1994-02-01), Ying
patent: 5424570 (1995-06-01), Sardella et al.
patent: 5598028 (1997-01-01), Losavio et al.

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