Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-06-21
2005-06-21
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S069000, C257S350000
Reexamination Certificate
active
06909118
ABSTRACT:
A TFT capable of showing a large gm (large ON-current) and having characteristics comparable to those of Si-MOSFET despite of its relatively simple configuration was fabricated by the steps of coating, for example, a positive photo-resist on an Mo film; subjecting the photo-resist to back light exposure from the glass-substrate side under masking with a bottom gate electrode, to thereby form a resist pattern having the same geometry and being aligned with the bottom gate electrode because exposure light is intercepted by the bottom gate electrode but can travel through the Mo film; and etching the Mo film under masking by the resist pattern to thereby form a top gate electrode in conformity with the geometry of the resist pattern in a self-aligned manner.
REFERENCES:
patent: 5702960 (1997-12-01), Moon
patent: 5818070 (1998-10-01), Yamazaki et al.
patent: 2002/0031876 (2002-03-01), Hara et al.
patent: 10-173192 (1998-06-01), None
patent: 2002-033481 (2002-01-01), None
Greer Burns & Crain Ltd.
Nguyen Cuong
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