Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1996-07-09
2000-01-04
Crane, Sara
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 20, 257 25, 257 62, H01L 2906
Patent
active
060112719
ABSTRACT:
In a semiconductor device, concave sections in which an opening area becomes small in proportion as a depth becomes deep are formed in a crystal layer, and a quantum structure is formed on at least one crystal face of a bottom section of the concave section and a border formed between plural sidewalls thereof. In case the quantum structure is formed in the bottom section, a quantum box is formed therein. If the quantum structure is formed in the border between the sidewalls of the concave section, a quantum wire is formed therein. In case the quantum structure is formed in the sidewall of the concave section, a two-dimensional quantum well is formed therein.
REFERENCES:
patent: 5313484 (1994-05-01), Arimoto
patent: 5362973 (1994-11-01), Paoli et al.
patent: 5486706 (1996-01-01), Yuki et al.
patent: 5656821 (1997-08-01), Sakuma
D.L. Kendall, On etching very narrow grooves in silicon, Applied Physics Letters, vol. 26, No. 4, Feb. 15, 1975, pp. 195-198.
E. Bassous, Fabrication of Novel Three-Dimensional Microstructures by the Anisotropic Etching of (100) and (110) Silicon, IEEE Trans. on Electron Devices, vol. ED-25, No. 10, Oct. 1978, pp. 1178-1184.
P.M. Pertroff, et al., Toward quantum well wires: Fabrication and optical properties, Applied Physics Letters, vol. 41, No. 7, Oct. 1, 1982, pp. 635-638.
E. Kapon, et al., Molecular beam epitaxy of GaAs/AlGaAs superlattice heterostructures on nonplanar substrates, Applied Physics Letters, vol. 50, No. 6, Feb. 9, 1987, pp. 347-349.
H. Temkin, et al., Low-temperature photoluminescence from InGaAs/InP quantum wires and boxes, Applied Physics Letters, vol 50, No. 7, Feb. 16, 1987, pp. 413-415.
H. Asai, et al., Narrow two-dimensional electron gas channels in GaAs/AlGaAs sidewall interfaces by selective growth, Applied Physics Letters, vol. 51, No. 19, Nov. 9, 1987, pp. 1518-1520.
H.V. Schreiber, et al., Si/SiGe Heterojunction Bipolar Transistor with Base Doping Highly Exceeding Emitter Doping Concentration, Electronics Letters, vol. 25, No. 3, Feb. 2, 1989, pp. 185-186.
E. Kapon, et al., Single quantum wire semiconductor lasers, Applied Physics Letters, vol. 55, No. 26, Dec. 25, 1989, pp. 2715-2717.
T. Fukui, et al., GaAs tetrahedral quantum dot structures fabricated using selective area metalorganic chemical vapor deposition, Applied Physics Letters, vol. 58, No. 18, May 6, 1991, pp. 2018-2020.
D.J. Robbins, et al., Electroluminescence from a pseudomorphic Si.sub.0.8 Ge.sub.0.2 alloy, Applied Physics Letters, vol. 59, No. 11, Sep. 9, 1991, pp. 1350-1352.
S. Tsukamoto, et al., Fabrication of GaAs wires on epitaxially grown V grooves by metal-organic chemical-vapor deposition, J. Applied Physics, vol. 71, No. 1, Jan. 1, 1992, pp. 533-535.
D. Leonard, et al., Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces, Applied Physics Letters, vol. 63, No. 23, Dec. 6, 1993, pp. 3203-3205.
J.Y. Marzin, et al., Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs, Physical Review Letters, vol. 73, No. 5, Aug. 1, 1994, pp. 716-719.
J. Oshinowa, et al., Highly uniform InGaAs/GaAs/quantum dots (.about.15 nm) by metalorganic chemical vapor deposition, Applied Physics Letters, vol. 65, No. 11, Sep. 12, 1994, pp. 1421-1423.
K. Mukai, et al., Self-formed In.sub.0.5 Ga.sub.0.5 As Quantum Dots on GaAs Substrates Emitting at 1.3.mu.m, Jpn. J. Appl. Phys., vol. 33 (1994), Part 2, No. 12A, Dec. 1, 1994, pp. L1710-L1712.
S. Muto, On a Possibility of Wavelength-Domain-Multiplication Memory Using Quantum Boxes, Jpn. J. Applied Physics, vol. 34 (1995), Part 2, No. 2B, Feb. 15, 1995, pp. L210-L212.
Fukui et al., "GaAs Tetrahedral Quantum Dots: Towards a Zero-Dimensional Electron-Hole System", Extended Abstracts of 22nd Conference on Solid State Devices and Materials, Sendai, 1990, pp. 99-102.
Muto Shun-ichi
Sakuma Yoshiki
Sugiyama Yoshihiro
Crane Sara
Fujitsu Limited
LandOfFree
Semiconductor device and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of fabricating the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1074448