Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2005-10-04

2005-10-04

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S096000, C257S097000, C257S190000

Reissue Patent

active

RE038805

ABSTRACT:
A semiconductor device comprises a single crystal substrate, a nucleus formation buffer layer formed on the single crystal substrate, and a lamination layer including a plurality of Al1-x-yGaxInyN (0≦x≦1, 0≦y≦1, x+y≦1) layers laminated above the nucleus formation buffer layer. The nucleus formation buffer layer is formed of Al1-s-tGasIntN (0≦s≦1, 0≦t≦1, s+t≦1) and is formed on a surface of the substrate such that the nucleus formation buffer layer has a number of pinholes for control of polarity and formation of nuclei. A method of fabricating a semiconductor device comprises the steps of: forming, above an Al1-x-yGaxInyN (0≦x≦1, 0≦y≦1, x+y≦1) semiconductor layer doped with a p-type dopant, a cap layer for preventing evaporation of a constituent element of the semiconductor layer, the cap layer being formed of one of AlN in which a p-type dopant is added and Al2O3, subjecting the semiconductor layer to heat treatment, and removing at least a part of the cap layer.

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