Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2005-03-22

2005-03-22

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S425000, C438S426000, C438S435000

Reexamination Certificate

active

06869859

ABSTRACT:
A pad oxide film and a silicon nitride film are formed on a semiconductor substrate. Next, after the patterning of the silicon nitride film, by etching the pad oxide film and the substrate, a first trench is formed in a first region and a second trench is formed in a second region. After that, by performing side etching of the pad oxide film of the first region while protecting the second region with a resist, a gap is formed between the substrate and the silicon nitride film. Subsequently, the inner surfaces of the first and second trenches are oxidized. At this time, a relatively large volume of oxidizing agent (oxygen) is supplied to a top edge portion of the first trench, and the curvature of the corner of the substrate increases.

REFERENCES:
patent: 5858830 (1999-01-01), Yoo et al.
patent: 6403446 (2002-06-01), Ishitsuka et al.
patent: 6518146 (2003-02-01), Singh et al.
patent: 6580117 (2003-06-01), Shimizu
patent: 20040119135 (2004-06-01), van Bentum et al.
patent: 2000-269450 (2000-09-01), None

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