Metal treatment – Stock – Ferrous
Patent
1986-07-16
1990-03-20
McCamish, Marion C.
Metal treatment
Stock
Ferrous
29576, 29580, 148 15, 357 50, 357 59, 428156, 428161, 428195, 428212, 436 67, 436 90, 436203, H01L 2948
Patent
active
049105728
ABSTRACT:
A semiconductor device and a method of making a semiconductor device including a semiconductor substrate of p-type conductivity, a first semiconductor region of n.sup.+ -type conductivity selectively formed on the semiconductor substrate, a second semiconductor region of n-type conductivity formed insularly contacting on the first semiconductor region, a groove extending from a surface of the second semiconductor region spaced from the first semiconductor region to the vicinity of a surface of the first semiconductor region abutting the second semiconductor region, a conductive material charged into the groove, and a third semiconductor region of high impurity n-type conductivity disposed so as to connect a bottom of the groove with the surface of the first semiconductor region, whereby the conductive material in the groove and the third semiconductor region are used as low resistance current paths reaching from the surface of the second semiconductor region to the first semiconductor region.
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Matsushita Electric - Industrial Co., Ltd.
McCamish Marion C.
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