Semiconductor device and method of fabricating the...

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead

Reexamination Certificate

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C257S678000, C257S691000, C257S698000, C257S787000, C257S791000, C257SE21499, C257SE23004, C257SE23062, C257SE23069, C257SE23178, C438S106000, C438S108000, C438S112000, C438S118000, C438S612000

Reexamination Certificate

active

07911047

ABSTRACT:
A semiconductor device includes: a package substrate that includes a recessed portion, with electrode pads that are electrically connected to electrodes of the semiconductor chip being formed inside the recessed portion; a semiconductor chip that is housed in the recessed portion; terminal-use wires that are formed on the surface of the package substrate and are electrically connected to the electrode pads; external connection pads that are formed on a back surface of the package substrate and are electrically connected to the electrode pads; a sealing resin portion that includes a grinded surface that is parallel to the surface of the package substrate, and seals at least the semiconductor chip by a sealing resin; rewiring pads that are formed on the grinded surface; and connecting wires that are formed on the grinded surface and electrically interconnect the terminal-use wires and the rewiring pads.

REFERENCES:
patent: 5874321 (1999-02-01), Templeton et al.
patent: 6876554 (2005-04-01), Inagaki et al.
patent: 6914322 (2005-07-01), Iijima et al.
patent: 2008/0090335 (2008-04-01), Morimoto et al.
patent: 11-168150 (1999-06-01), None
patent: 2002-158312 (2002-05-01), None
patent: 2003-249604 (2003-09-01), None
patent: 2005-235824 (2005-09-01), None
patent: 2007-294634 (2007-11-01), None

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