Semiconductor device and method of fabricating semiconductor...

Details Semiconductor device and method of fabricating semiconductor... Semiconductor device and method of fabricating semiconductor...

2005-01-11

2005-01-11

Abraham, Fetsum (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S208000, C257S211000, C257S207000, C438S618000

Reexamination Certificate

active

06841880

ABSTRACT:
In the semiconductor device of the present invention, a plurality of dummy patterns are formed in a grid arrangement in the scribe line areas of a wafer, and a plurality of dummy patterns are formed in a diagonally forward skipped arrangement in the chip interior areas of the wafer. Altering the arrangement of dummy patterns in the chip interior areas and scribe line areas in this way enables formation of dummy patterns with greater uniformity in the chip interior areas and enables formation of dummy patterns with greater resistance to loss that occurs when dicing in scribe line areas.

REFERENCES:
patent: 6528818 (2003-03-01), Satya et al.
patent: 6614120 (2003-09-01), Sato et al.
patent: 2000-286263 (2000-10-01), None
patent: 3128205 (2000-11-01), None
patent: 2001-203261 (2001-07-01), None
patent: 2002-208676 (2002-07-01), None

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