Semiconductor device and method of fabricating same, as well as

Details Semiconductor device and method of fabricating same, as well as Semiconductor device and method of fabricating same, as well as

1993-11-10

1995-01-17

Thomas, Tom

Fishing, trapping, and vermin destroying

437209, 437214, 437220, H01L 2160

Patent

active

053825462

ABSTRACT:
In a semiconductor device having a number of pins, there is used an inner lead group comprising a group of upper inner leads 7A present in an upper plane and a group of lower inner leads 7B in a lower plane, the upper inner lead group and the lower inner lead group being laminated together in an insulated from each other through an insulating layer 2C, both end portions in the circumferential direction of each upper inner lead 7A being overlapped with circumferential ends of adjacent lower inner leads 7B, 7B located on both sides of the upper inner lead, and bonding areas 8A of the upper inner leads 7A being positioned radially outwards with respect to bonding areas 8B of the lower inner leads 7B, whereby the pitch between inner leads can be reduced to half, and the number of pins can be increased under the condition that the size of a resin sealing body 24 is fixed. Further, wire bonding can be done properly because a reaction force induced at the time of wire bonding for the upper inner leads 7A is borne at the overlapped portions of the lower inner leads 7B, 7B.

REFERENCES:
patent: 4259436 (1981-03-01), Tabuchi et al.
patent: 4308339 (1981-12-01), Lindberg
patent: 4987473 (1991-01-01), Johnson
patent: 5070039 (1991-12-01), Johnson et al.
patent: 5099306 (1992-03-01), Dunaway et al.
patent: 5140404 (1992-08-01), Fogal et al.
patent: 5202288 (1993-04-01), Doering et al.
patent: 5206188 (1993-04-01), Hiroi et al.

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