Semiconductor device and method of fabricating same

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor

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257212, 257401, 257630, 257646, 257649, H01L 2974

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active

059456922

ABSTRACT:
There is disclosed a semiconductor device having an MOS gate for reducing variations in threshold voltage (V.sub.th) with time wherein a surface protective film is not formed in a device area including channels but only in a device peripheral area, thereby reducing the amount of hydrogen atoms migrating to a silicon-silicon oxide interface in a cell area and, accordingly, reducing the number of Si--H chemical bonds at the interface.

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Patent Abstracts of Japan, vol. 16, No. 558 (E-1294), Nov. 27, 1992, and JP 4 212468, Aug. 4, 1992.

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