Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1995-05-02
1999-08-31
Crane, Sara
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257212, 257401, 257630, 257646, 257649, H01L 2974
Patent
active
059456922
ABSTRACT:
There is disclosed a semiconductor device having an MOS gate for reducing variations in threshold voltage (V.sub.th) with time wherein a surface protective film is not formed in a device area including channels but only in a device peripheral area, thereby reducing the amount of hydrogen atoms migrating to a silicon-silicon oxide interface in a cell area and, accordingly, reducing the number of Si--H chemical bonds at the interface.
REFERENCES:
patent: 4161744 (1979-07-01), Blaske et al.
patent: 4364073 (1982-12-01), Becke et al.
patent: 4814283 (1989-03-01), Temple et al.
patent: 5196354 (1993-03-01), Ohtaka et al.
patent: 5521409 (1996-05-01), Hshieh et al.
Patent Abstracts of Japan, vol. 14, No. 408 (E-972) (4351), Sep. 4, 1990, and JP 2 153570, Jun. 13, 1990.
IEEE Transactions on Electron Devices, vol. ED-27, No. 2, pp. 340-343, Feb. 1980, Richard W. Coen, et al., "A High-Performance Planar Power Mosfet".
Patent Abstracts of Japan, vol. 11, No. 275 (E-537) (2722), Sep. 5, 1987, and JP 62 73766, Apr. 4, 1987.
Patent Abstracts of Japan, vol. 16, No. 558 (E-1294), Nov. 27, 1992, and JP 4 212468, Aug. 4, 1992.
Mochizuki Kouichi
Yano Mitsuhiro
Crane Sara
Mitsubishi Denki & Kabushiki Kaisha
LandOfFree
Semiconductor device and method of fabricating same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of fabricating same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of fabricating same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2427016