Semiconductor device and method of fabricating same

Details Semiconductor device and method of fabricating same Semiconductor device and method of fabricating same

1995-11-30

1996-11-26

Dang, Trung

Fishing, trapping, and vermin destroying

437203, 437 31, 437 32, 437982, 437947, 148DIG50, 148DIG11, 148DIG133, H01L 2144, H01L 2148

Patent

active

055785220

ABSTRACT:
A semiconductor device including a layer formed without being affected by a stepped ground pattern and a method of fabricating the semiconductor device are disclosed. Cap portions (30) (insulating layers) formed over trenches (13) and covering doped polysilicon (5) have an inclined surface (26) which satisfies Y/X <5 where X is the length of the inclined surface (26) in a direction of the surface of a body (50) and Y is the height of the inclined surface (26) from the surface of the body (50). Formation of the insulating layers having the smooth inclined surface satisfying Y/X<5 permits a first main electrode to be formed nondefectively without being affected by the ground pattern including the insulating layers.

REFERENCES:
patent: 4967245 (1990-10-01), Cogan et al.
patent: 5173435 (1992-12-01), Harada
patent: 5234852 (1993-08-01), Liou
patent: 5270257 (1993-12-01), Shin
patent: 5283201 (1994-02-01), Tsang et al.
patent: 5378655 (1995-01-01), Hutchings et al.

Affiliated with

Also associated with

Rating

Semiconductor device and method of fabricating same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of fabricating same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of fabricating same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1972677