Semiconductor device and method of fabricating same

Details Semiconductor device and method of fabricating same Semiconductor device and method of fabricating same

2005-12-05

2010-11-23

Nadav, Ori (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S059000, C257S072000, C257S347000, C257S637000, C257S649000

Reexamination Certificate

active

07838968

ABSTRACT:
There are disclosed TFTs having improved reliability. An interlayer dielectric film forming the TFTs is made of a silicon nitride film. Other interlayer dielectric films are also made of silicon nitride. The stresses inside the silicon nitride films forming these interlayer dielectric films are set between −5×109and 5×109dyn/cm2. This can suppress peeling of the interlayer dielectric films and difficulties in forming contact holes. Furthermore, release of hydrogen from the active layer can be suppressed. In this way, highly reliable TFTs can be obtained.

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