Semiconductor device and method of fabricating same

Details Semiconductor device and method of fabricating same Semiconductor device and method of fabricating same

2005-12-02

2010-06-01

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S725000, C438S453000, C438S639000, C438S712000, C257S072000, C257S066000, C257S642000, C257S774000

Reexamination Certificate

active

07727898

ABSTRACT:
A semiconductor device having reliable electrode contacts. First, an interlayer dielectric film is formed from a resinous material. Then, window holes are formed. The interlayer dielectric film is recessed by oxygen plasma. This gives rise to tapering window holes. This makes it easy to make contacts even if the circuit pattern is complex.

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