Semiconductor device and method of fabricating same

Details Semiconductor device and method of fabricating same Semiconductor device and method of fabricating same

2001-06-27

2010-10-26

Hu, Shouxiang (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

C257S212000, C257S401000, C257S630000, C257S646000, C257S649000, C257S409000, C257S488000, C257SE29010, C257SE29006

Reissue Patent

active

RE041866

ABSTRACT:
There is disclosed a semiconductor device having an MOS gate for reducing variations in threshold voltage (Vth) with time wherein a surface protective film is not formed in a device area including channels but only in a device peripheral area, thereby reducing the amount of hydrogen atoms migrating to a silicon-silicon oxide interface in a cell area and, accordingly, reducing the number of Si—H chemical bonds at the interface.

REFERENCES:
patent: 4161744 (1979-07-01), Blaske et al.
patent: 4364073 (1982-12-01), Becke et al.
patent: 4798810 (1989-01-01), Blanchard et al.
patent: 4814283 (1989-03-01), Temple et al.
patent: 5196354 (1993-03-01), Ohtaka et al.
patent: 5521409 (1996-05-01), Hshieh et al.
patent: 0 091 079 (1983-10-01), None
patent: 62-073766 (1987-04-01), None
patent: 62-213167 (1987-09-01), None
patent: 1-265524 (1989-10-01), None
patent: 02-153570 (1990-06-01), None
patent: 4-57330 (1992-02-01), None
patent: 4-130631 (1992-05-01), None
patent: 04-212468 (1992-08-01), None
patent: 6-140633 (1994-05-01), None
Richard W. Coen, et al., “A High-Performance Planar Power MOSFET”, IEEE Transactions on Electron Devices, vol. ED-27, No. 2, Feb. 1980, pp. 340-343.
Patent Abstracts of Japan, vol. 14, No. 408 (E-972) (4351), Sep. 4, 1990, and JP 2 153570, Jun. 13, 1990.
IEEE Transactions on Electron Devices, vol. ED-27, No. 2, pp. 340-343, Feb. 1980, Richard W. Coen, et al., “A High-Performance Planar Power Mosfet”.
Patent Abstracts of Japan vol. 11, No. 275 (E-537) (2722), Sep. 5, 1987, and JP 62 73766, Apr. 4, 1987.
Patent Abstracts of Japan, vol. 16, No. 558 (E-1294), Nov. 27, 1992, and JP 4 212468, Aug. 4, 1992.

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