Semiconductor device and method of fabricating same

Details Semiconductor device and method of fabricating same Semiconductor device and method of fabricating same

2008-05-13

2008-05-13

Le, Thao X. (Department: 2813)

Semiconductor device manufacturing: process

Forming schottky junction

Using refractory group metal

C438S278000, C438S279000, C438S283000, C438S290000, C438S585000, C438S587000, C438S648000, C438S656000, C438S683000, C438S785000

Reexamination Certificate

active

11520590

ABSTRACT:
There are disclosed TFTs that have excellent characteristics and can be fabricated with a high yield. The TFTs are fabricated, using an active layer crystallized by making use of nickel. Gate electrodes are comprising tantalum. Phosphorus is introduced into source/drain regions. Then, a heat treatment is performed to getter nickel element in the active layer and to drive it into the source/drain regions. At the same time, the source/drain regions can be annealed out. The rate electrodes of tantalum can withstand this heat treatment.

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