Semiconductor device and method of fabricating same

Details Semiconductor device and method of fabricating same Semiconductor device and method of fabricating same

2005-06-14

2005-06-14

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S370000, C257S378000

Reexamination Certificate

active

06906363

ABSTRACT:
A semiconductor device raises the maximum oscillation frequency fmaxof the bipolar transistor. The stopper dielectric layer is formed on the substrate to cover the transistor section and the isolation dielectric. The interlayer dielectric layer is formed on the stopper dielectric layer. The base contact plug, which is formed in the interlayer dielectric layer, is located over the isolation dielectric in such a way as to contact the graft base region near its bottom end corner. Therefore, the base contact needs not to entirely overlap with the graft base region, which means that the graft base region can be narrowed without increasing the base resistance Rband that the collector-base capacitance Ccbis reduced. Also, electrical short circuit between the graft base region and the collector region can be effectively suppressed by the stopper dielectric layer.

REFERENCES:
patent: 4892837 (1990-01-01), Kudo
patent: 6476452 (2002-11-01), Suzuki
patent: 0 349 107 (1990-01-01), None
patent: 0 409 370 (1991-01-01), None
patent: 51-49889 (1976-12-01), None
patent: 4-022133 (1992-01-01), None
patent: 5-160141 (1993-06-01), None
patent: 5-198526 (1993-08-01), None
patent: 6-077241 (1994-03-01), None
patent: 2002-252294 (2000-09-01), None
patent: 2001-118858 (2001-04-01), None
European Search Report dated Nov. 25, 2004.

Affiliated with

Also associated with

Rating

Semiconductor device and method of fabricating same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of fabricating same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of fabricating same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3509152