Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Patent
1994-08-05
1996-04-16
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
257 65, 257 66, H01L 2904, H01L 31036, H01L 2912, H01L 2976
Patent
active
055085334
ABSTRACT:
A highly reliable thin-film transistor (TFT) having excellent characteristics. A silicon film is grown laterally by adding a metal element such as nickel to promote crystallization. A crystal grain boundary is formed parallel to a gate electrode and around the center of the gate electrode. Thus, the grain boundary does not exist around the interface between the drain and the channel formation region. At this interface, a large stress is induced by a large electric field. The concentration of the metal element is low around the interface between the drain and the channel formation region. Therefore, the leakage voltage is small. Also, when a reverse voltage is applied to the gate electrode, the leakage current is small.
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Stoemenos et al, "Crystallization . . . Utilizing Gold", App Phys Lttr, 18 Mar. 1991.
Butts Karlton C.
Ferguson Jr. Gerald J.
Meier Stephen D.
Semiconductor Energy Laboratory Co,. Ltd.
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