Semiconductor device and method of electrically isolating circui

Details Semiconductor device and method of electrically isolating circui Semiconductor device and method of electrically isolating circui

1976-11-08

1977-07-12

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307304, 357 23, 357 41, 357 47, 357 53, 357 59, H01L 2978, H01L 2712

Patent

active

040358291

ABSTRACT:
An integrated circuit device comprises a layer of semiconductor material on an insulating substrate. At least two spaced-apart circuit components, such as field-effect transistors, are formed in the layer of semiconductor material. The circuit components are electrically isolated from each other by a method of (1) forming a layer of insulating material over the layer of semiconductor material and between the circuit components, (2) forming a layer of electrically conductive material over the layer of insulating material, and (3) providing bias means between the layer of conductive material and the layer of semiconductor material so as to deplete completely a region in the layer of semiconductor material opposite to the layer of conductive material and between the circuit components.

REFERENCES:
patent: 3035186 (1962-05-01), Doucette
patent: 3611071 (1971-10-01), Augusta
patent: 3676705 (1972-07-01), Meyer
patent: 3678347 (1972-07-01), Tulp et al.
patent: 3821776 (1974-06-01), Hayashi et al.
patent: 3859716 (1975-01-01), Tihanyi
Bolecky, "CMOSTs on Insulating Substrates," RCA Review, June 1970, pp. 372-395.
Lin et al.,"Shielded Silicon Gate CMOS," IEEE Trans. on Electron Devices, vol. ED-19, No. 11, Nov. 1972, pp. 1199-1207.

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