Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With integrated trigger signal amplification means
Reexamination Certificate
2007-05-21
2011-12-20
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With integrated trigger signal amplification means
C257SE27052, C257SE29036
Reexamination Certificate
active
08080830
ABSTRACT:
A semiconductor device includes: a bulk semiconductor substrate; a thyristor formed in the bulk semiconductor substrate; a gate electrode formed at the third region; and a well region. The thyristor included a first region of a first conduction type, a second region of a second conduction type opposite to the first conduction type, a third region of the first conduction type, and a fourth region of the second conduction type, junctioned in order. The well region of the second conduction type is formed in the bulk semiconductor substrate, the third region is formed in the well region. A first voltage is impressed on the first region side of the thyristor, a second voltage higher than the first voltage is impressed on the fourth region side of the thyristor, and a voltage higher than or equal to the first voltage is impressed on the well region.
REFERENCES:
patent: 5621229 (1997-04-01), Huang
patent: 6118141 (2000-09-01), Xu et al.
patent: 6462359 (2002-10-01), Nemati et al.
patent: 6888176 (2005-05-01), Horch et al.
patent: 6911680 (2005-06-01), Horch et al.
patent: 7381999 (2008-06-01), Yang
Farid Nemati et al., “Fully Planar 0.562 βm2T-RAM CELL in a 130nm SOI CMOS Logic Technology for High-Density High-Performance SRAMs”, 2004 IEEE IEDM Tech., pp. 273, California 2004.
Farid Nemati et al., “A Novel Thyristor-based SRAM Cell (T-RAM) for high-Speed, Low-Voltage, Giga-scale Memories”, 1999 IEEE IEDM Tech., pp. 283, Stanford, California, 1999.
Farid Nemati et al., “A Novel High Density, Low Voltage SRAM: Cell with a Vertical NDR Device”, 1998 IEEE, VLSI Technology Tech. Dig., pp. 66, Stanford, California, 1998.
Lee Eugene
Rader & Fishman & Grauer, PLLC
Sony Corporation
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