Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-05-16
2010-06-01
Gurley, Lynne A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S209000, C257S665000, C257SE21592, C257SE23129, C257SE23149, C438S132000, C438S467000, C438S607000, C313S142000, C313S251000, C365S096000, C365S104000, C365S177000
Reexamination Certificate
active
07728407
ABSTRACT:
A semiconductor device includes a semiconductor substrate, and an electrical fuse including a first conductor including a first cutting target region, and a second conductor branched from the first conductor and connected to the first conductor and including a second cutting target region, which are formed on the semiconductor substrate, wherein a flowing-out region is formed of the first conductor flowing toward outside between the first cutting target region and the second cutting target region in a condition of cutting the electrical fuse.
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Gebreyesus Yosef
Gurley Lynne A
NEC Electronics Corporation
Young & Thompson
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