Semiconductor device and method of cutting electrical fuse

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C257S209000, C257S665000, C257SE21592, C257SE23129, C257SE23149, C438S132000, C438S467000, C438S607000, C313S142000, C313S251000, C365S096000, C365S104000, C365S177000

Reexamination Certificate

active

07728407

ABSTRACT:
A semiconductor device includes a semiconductor substrate, and an electrical fuse including a first conductor including a first cutting target region, and a second conductor branched from the first conductor and connected to the first conductor and including a second cutting target region, which are formed on the semiconductor substrate, wherein a flowing-out region is formed of the first conductor flowing toward outside between the first cutting target region and the second cutting target region in a condition of cutting the electrical fuse.

REFERENCES:
patent: 4064493 (1977-12-01), Davis
patent: 2001/0017755 (2001-08-01), Toyoshima
patent: 2004/0159906 (2004-08-01), Hashimoto
patent: 2004/0224444 (2004-11-01), Hisaka
patent: 2004/0262710 (2004-12-01), Ueda
patent: 2005/0285222 (2005-12-01), Thei et al.
patent: 2006/0054993 (2006-03-01), Fukuda
patent: 2007/0007621 (2007-01-01), Omura et al.
patent: 2004-214580 (2004-07-01), None
patent: 2005-039220 (2005-02-01), None
patent: 2005-057186 (2005-03-01), None

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