Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2006-12-11
2008-12-23
Pham, Ly D (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185160, C365S185170, C365S185180, C365S185230, C365S063000
Reexamination Certificate
active
07468909
ABSTRACT:
The present invention provides a semiconductor device that includes: a memory cell array that includes non-volatile memory cells; a first selecting circuit that connects or disconnects a source and a drain of a transistor that forms one of the memory cells, to or from a data line DATAB connected to a first power supply; and a second selecting circuit that connects or disconnects the source and drain to or from a ground line ARVSS connected to a second power supply. In this semiconductor device, the first selecting circuit and the second selecting circuit are arranged on the opposite sides of the memory cell array. The present invention also provides a method of controlling the semiconductor device.
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Kurosaki Kazuhide
Sakashita Mototada
Yano Masaru
Pham Ly D
Spansion LLC
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