Semiconductor device and method for strain controlled...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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C257SE31127, C438S065000

Reexamination Certificate

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07964927

ABSTRACT:
A semiconductor device which has controlled optical absorption includes a substrate, and a semiconductor layer supported by the substrate. The semiconductor has variable optical absorption at a predetermined optical frequency in relationship to a bandgap of the semiconductor layer. Also included is a strain application structure coupled to the semiconductor layer to create a strain in the semiconductor layer to change the semiconductor bandgap.

REFERENCES:
patent: 5387803 (1995-02-01), Kurtz et al.
patent: 6927387 (2005-08-01), Viktorovitch et al.
patent: 6946318 (2005-09-01), Wada et al.
patent: 7291904 (2007-11-01), Matsuda et al.
patent: 7485799 (2009-02-01), Guerra
patent: 7605391 (2009-10-01), Burns
patent: 2008/0061222 (2008-03-01), Powers et al.
patent: 2009/0116095 (2009-05-01), Guerra

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