Semiconductor device and method for producing the same

Details Semiconductor device and method for producing the same Semiconductor device and method for producing the same

1995-03-30

1997-12-23

Niebling, John

Fishing, trapping, and vermin destroying

437194, 148DIG20, H01L 21443

Patent

active

057007195

ABSTRACT:
A semiconductor device, wherein an electrode wiring, which is in contact with semiconductor layers of mutually different conductive types and serves to connect at least he layers of mutually different conductive types, comprises a first portion principally composed of a component same as the principal component of the semiconductor layers, and a second portion consisting of a metal.

REFERENCES:
patent: 4328261 (1982-05-01), Heinecke et al.
patent: 4562640 (1986-01-01), Widmann et al.
patent: 4648175 (1987-03-01), Metz, Jr. et al.
patent: 4800176 (1989-01-01), Kakumu et al.
patent: 4833094 (1989-05-01), Kenney
patent: 4851257 (1989-07-01), Young et al.
patent: 5084417 (1992-01-01), Joshi et al.
patent: 5179042 (1993-01-01), Mikoshiba et al.
S. K. Ghandhi VLSI Fabrication Principles (1983) p. 439.
M. Hanabusa et al. Japanese Journal of Applied Physics vol. 27 No. 8 (Aug. 1988) pp. L1392-L1394. Provided by Applicant.
"Photochem. Vapor Dep. of Al Thin Films Using DMAH".
Patent Abstracts of Japan, vol. 9, No. 106 (E-313), 10 May 1985; & JP-A-59 231 871.
"Photochemical Vapor Deposition of Aluminum Thin Films Using Dimethylaluminum Hydride", Mitsugu Hanabusa et al., Japanese Journal of Applied Physics, vol. 27, No. 8, Aug., 1988, pp. L1392-L1394.

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