Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2006-10-10
2008-11-25
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S336000, C257S369000, C257S408000
Reexamination Certificate
active
07456448
ABSTRACT:
A semiconductor device, including a first MIS-type transistor formed in a first region of a semiconductor region, the first region being of a first conductivity type, the first MIS-type transistor including: a first gate insulating film formed on the first region; a first gate electrode formed on the first gate insulating film; a first extension diffusion layer of a second conductivity type formed in a region of the first region under and beside the first gate electrode; and a first fluorine diffusion layer formed in a first channel region of the first conductivity type sandwiched between portions of the first extension diffusion layer, wherein portions of the first fluorine diffusion layer extend from the first extension diffusion layer and overlap together in a region directly under the first gate electrode.
REFERENCES:
patent: 7053450 (2006-05-01), Kotani
patent: 7078285 (2006-07-01), Suenaga
patent: 7176530 (2007-02-01), Bulucea et al.
patent: 2004/0188767 (2004-09-01), Weber et al.
patent: 2001-156291 (2001-06-01), None
patent: 3523151 (2004-02-01), None
Kotani Naoki
Okazaki Gen
Sebe Akio
Tamaki Tokuhiko
Mandala Victor A
McDermott Will & Emery LLP
Panasonic Corporation
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