Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed
Reexamination Certificate
2007-07-10
2007-07-10
Smith, Bradley (Department: 2891)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Optical characteristic sensed
C438S736000, C257SE21231
Reexamination Certificate
active
11412165
ABSTRACT:
The invention provides a semiconductor device having less defectives in shape of a patterned wiring layer even in a case of having a wiring layer for which patterning is required to be carried out over a longer period of etching time, and a method for producing the same. By carrying out dry etching using a fluorine-based gas with a photoresist17aused as a mask, an auxiliary mask15ais formed by patterning the insulation membrane. Next, by carrying out dry etching using a chlorine-based gas using the auxiliary mask15aand the remaining photoresist17aas masks, wiring13ais formed by patterning the wiring layer13. In the second etching, the auxiliary mask15ais scarcely etched. Therefore, if the thickness of the photoresist17ais equivalent to that in the prior arts, it is possible to pattern a thicker wiring layer13than in the prior arts.
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Rohm & Co., Ltd.
Smith Bradley
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