Semiconductor device and method for producing same

Details Semiconductor device and method for producing same Semiconductor device and method for producing same

2006-01-27

2010-02-16

Andújar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C257S779000, C257S684000

Reexamination Certificate

active

07663222

ABSTRACT:
The semiconductor device includes a semiconductor body having a first and an opposite second main surface and side faces connecting the main surfaces, a circuit region in the semiconductor body adjacent to the first main surface, having a circuit contact terminal, a metallization region extending from the circuit contact terminal on the first main surface onto a side face of the semiconductor body to provide an exposed contacting region on the side face of the semiconductor body, and an insulation layer arranged between the metallization region and the semiconductor body, the insulation layer having an opening for electrically connecting the circuit contact terminal to the metallization region.

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patent: WO 03/073505 (2003-09-01), None
“ShellBGA Process Flow.”Xintec. www.xintec.com.tw/ShellBGAEng/ShellBGA%20Process%Flow.htm.

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