Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Including additional component in same – non-isolated structure
Patent
1997-11-14
2000-05-09
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Including additional component in same, non-isolated structure
257487, 257603, H01L 27082
Patent
active
060607637
ABSTRACT:
A semiconductor device has formed onto the surface of a collector region 12 of a semiconductor substrate 11 of one conductivity type with a base region 13 of a different conductivity type, an emitter region 16 of the one conductivity type formed on a surface within the base region 13, and a base electrode 18 and emitter electrode 17 which are formed by opening windows in the base and emitter regions 13, 16. In this semiconductor device, a zener region 15 of an impurity concentration of the one conductivity type that is higher than that of the collector region 12 is provided in a through-passage region 14 which passes through to the bottom part from the surface of the base region 13, and on this zener region is formed an insulating film 21 of a thickness such that the zener region surface does not invert with the withstand voltage between the base region 13 and the zener region 15, the semiconductor device being covered at the base electrode 18 or emitter electrode 17 on the insulating film 21 on the zener region.
REFERENCES:
Abstract for JP Application No. 5-259479 filed Oct. 8, 1993.
Shimomura Akihiro
Uno Hirohiko
Yamagishi Kazuo
NEC Corporation
Prenty Mark V.
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