Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate
2011-05-10
2011-05-10
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
C257S107000, C257S133000
Reexamination Certificate
active
07939850
ABSTRACT:
A semiconductor device has a semiconductor body with a semiconductor device structure including at least a first electrode and a second electrode. Between the two electrodes, a drift region is arranged, the drift region including charge compensation zones and drift zones arranged substantially parallel to one another. At least one charge carrier storage region which is at least partially free of charge compensation zones is arranged in the semiconductor body.
REFERENCES:
patent: 6551909 (2003-04-01), Fujihira
patent: 2003/0207536 (2003-11-01), Miyasaka et al.
patent: 2004/0084724 (2004-05-01), Kapels et al.
patent: 10031461 (2002-01-01), None
Aloise Giulliano
Mauder Anton
Dicke, Billig & Czaja P.L.L.C.
Infineon Technologies Austria AG
Pham Long
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