Semiconductor device and method for producing a...

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor

Reexamination Certificate

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C257S107000, C257S133000

Reexamination Certificate

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07939850

ABSTRACT:
A semiconductor device has a semiconductor body with a semiconductor device structure including at least a first electrode and a second electrode. Between the two electrodes, a drift region is arranged, the drift region including charge compensation zones and drift zones arranged substantially parallel to one another. At least one charge carrier storage region which is at least partially free of charge compensation zones is arranged in the semiconductor body.

REFERENCES:
patent: 6551909 (2003-04-01), Fujihira
patent: 2003/0207536 (2003-11-01), Miyasaka et al.
patent: 2004/0084724 (2004-05-01), Kapels et al.
patent: 10031461 (2002-01-01), None

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