Semiconductor device and method for preparing the same

Details Semiconductor device and method for preparing the same Semiconductor device and method for preparing the same

1992-05-28

1994-05-31

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437247, H01L 2102

Patent

active

053169824

ABSTRACT:
A semiconductor device comprising a capacitor having a lower electrode of a Si-containing material, an aluminum oxide film formed on the surface of the lower electrode, a dielectric film of Ta.sub.2 O.sub.5 formed on the aluminum oxide film and an upper electrode provided on the dielectric film.

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patent: 5142432 (1992-08-01), Reinberg et al.
IEEE Electron Device Letters, vol. 9, No. 4, Apr., 1988 pp. 180-182 L. Manchanda, et al. "Yttrium Oxide/Silicon Dioxide: A New Dielectric Structure".
IEEE Transactions on Election Devices, vol. 37, No. 9, Sep. 1990 pp. 1939-1946 Hiroshi Shinriki, et al. "Promising Storage Capacitor Structures with Thin Ta.sub.2 O.sub.5 Film".

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