Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2009-10-06
2011-12-06
Tran, Thien F (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S328000, C257S335000, C257SE29256
Reexamination Certificate
active
08072011
ABSTRACT:
A semiconductor device includes a lateral double diffused metal oxide semiconductor (LDMOS) , a junction field effect transistor (JFET) and an inner circuit. The lateral double diffused metal oxide semiconductor includes a first source, a common drain and a first gate. The junction field effect transistor includes a second source, the common drain and a second gate. The second source is electrically connected to the first gate. The inner circuit is electrically connected to the first source.
REFERENCES:
patent: 7355224 (2008-04-01), Cai
patent: 2007/0041227 (2007-02-01), Hall et al.
Chorng-Wei Liaw, et al., IEEE Electron Device Letters, vol. 28, No. 8, Aug. 2007.
Hsu Wei-Lun
Lee Ching-Ming
Tang Sung-Nien
Wu Te-Yuan
Hsu Winston
Margo Scott
Tran Thien F
United Microelectronics Corp.
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