Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2011-04-19
2011-04-19
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257SE21649, C257SE21009, C257SE21021, C257SE21040, C257SE21664, C257SE27104
Reexamination Certificate
active
07928479
ABSTRACT:
A ferroelectric capacitor is formed over a semiconductor substrate (10), and thereafter, interlayer insulating films (48, 50, 52) covering the ferroelectric capacitor are formed. Next, a contact hole (54) reaching a top electrode (40) is formed in the interlayer insulating films (48, 50, 52). Next, a wiring (58) electrically connected to the top electrode (40) through the contact hole (54) is formed on the interlayer insulating films (48, 50, 52). At the time of forming the top electrode (40), conductive oxide films (40a, 40b) are formed, and then a cap film (40c) composed of a noble metal exhibiting less catalytic action than Pt and having a thickness of 150 nm or less is formed on the conductive oxide films (40a, 40b).
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Fujitsu Semiconductor Limited
Lee Eugene
Spalla David
Westerman Hattori Daniels & Adrian LLP
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