Semiconductor device and method for manufacturing the same...

Details Semiconductor device and method for manufacturing the same... Semiconductor device and method for manufacturing the same...

2011-06-21

2011-06-21

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

With current flow along specified crystal axis

C257S627000, C257S628000

Reexamination Certificate

active

07964899

ABSTRACT:
An active region and an isolation region are formed in the surface of a silicon semiconductor substrate having a (100) crystal plane as a principal surface. A gate insulating film and a gate electrode are formed on the active region in this order. A stress control film is formed to cover part of the active region where the gate electrode is not formed, the isolation region, the top surface of the gate electrode and sidewalls. A pair of stress control regions are formed to sandwich the gate electrode in the gate width direction of the gate electrode. In the stress control regions, the stress control film is not formed, or alternatively, a stress control film thinner than the stress control film formed on the gate electrode is formed.

REFERENCES:
patent: 7405436 (2008-07-01), Chidambarrao et al.
patent: 2004/0217448 (2004-11-01), Kumagai et al.
patent: 2005/0285150 (2005-12-01), Birner et al.
patent: 2004-87640 (2004-03-01), None
Jaeger, et al., “CMOS Stress Sensors on (100) Silicon,” IEEE Journal of Solid-State Circuits, Jan. 2000, pp. 85-95, vol. 35, No. 1, IEEE.

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