Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2011-03-08

2011-03-08

Chu, Chris (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE21247, C257S412000, C257S755000, C257S758000, C438S643000, C438S653000, C438S927000

Reexamination Certificate

active

07902669

ABSTRACT:
A semiconductor device includes a pattern layer formed on and/or over a semiconductor substrate, a fluorine-diffusion barrier layer containing a silicon-doped silicon oxide formed on and/or over the pattern layer, and an interlayer dielectric layer containing fluorine formed on and/or over the fluorine-diffusion barrier layer.

REFERENCES:
patent: 5382533 (1995-01-01), Ahmad et al.
patent: 5641983 (1997-06-01), Kato et al.
patent: 5998271 (1999-12-01), Schwalke
patent: 6001677 (1999-12-01), Shimizu
patent: 6114765 (2000-09-01), Fujii et al.
patent: 6156592 (2000-12-01), Kato et al.
patent: 6191463 (2001-02-01), Mitani et al.
patent: 6710407 (2004-03-01), Yamamoto
patent: 7205186 (2007-04-01), Wang et al.
patent: 7297603 (2007-11-01), Robb et al.
patent: 10-2003-0001937 (2003-01-01), None
patent: 10-2005-0059740 (2005-06-01), None
patent: 10-2005-0105586 (2005-11-01), None
patent: 100760923 (2007-09-01), None

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