Semiconductor device and method for manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means

Reexamination Certificate

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C257S513000, C257S514000, C257SE23002

Reexamination Certificate

active

07982283

ABSTRACT:
A semiconductor device and a method for manufacturing the same that reduces a process defect caused by pattern dependency in chemical mechanical polarization (CMP) or etching is excellent. The semiconductor device includes a device pattern formed on or in a substrate; and a plurality of dummy patterns having different longitudinal-sectional areas formed at one side of the device pattern. The dummy patterns, which have the same planar size but have different longitudinal-sectional areas from the three-dimensional structural point of view, include first dummy pattern having a first thickness and second dummy pattern having a second thickness larger than the first thickness.

REFERENCES:
patent: 5970238 (1999-10-01), Shibata et al.
patent: 6495855 (2002-12-01), Sawamura
patent: 6855605 (2005-02-01), Jurczak et al.
patent: 2002/0168833 (2002-11-01), Ota et al.
patent: 2003/0203619 (2003-10-01), Abe
patent: 2005/0026341 (2005-02-01), Nuetzel
patent: 1499626 (2004-05-01), None
patent: 10 2004 034 820 (2005-03-01), None

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