Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

1982-11-29

1986-08-05

James, Andrew J.

357 71, H01L 2348, H01L 2354

Patent

active

046046410

ABSTRACT:
The invention provides a semiconductor device having a semiconductor substrate with an active region including a buried contact and a field region including a field insulation layer. The device also includes a first polysilicon layer formed in the active region and on the field insulation layer, and a second polysilicon layer a portion of which is formed on said first polysilicon layer and another portion of which is formed on an isolation film covering a portion of the first polysilicon layer. The portion of the second polysilicon layer which is located above the field insulation layer is doped with metal or has a surface covered with a metal film. The semiconductor devices of the present invention operate at a high speed and are made small due to the use of multi-layer wiring.

REFERENCES:
patent: 3881971 (1975-05-01), Greer et al.
patent: 4128670 (1978-12-01), Gaensslen
patent: 4163246 (1979-07-01), Aomura et al.
patent: 4178674 (1979-12-01), Liu et al.
patent: 4240097 (1980-12-01), Raymond, Jr.
patent: 4278989 (1981-07-01), Baba et al.
patent: 4297721 (1981-10-01), McKenny et al.
"An Advanced PSA Technology for High Speed Bipolar LSI"--Nakashiba et al--IEEE Transactions on Electron Devices, vol. ED-27, No. 8--Aug. 1980, pp. 1390-1394.
"Polysilicon Resistor Process for Bipolar and MOS Applications"--Ning--IBM Technical Disclosure Bulletin, vol. 23, No. 1, Jun.--1980, pp. 368-370.
Okada et al., "A 4K Static Bipolar TTL RAM"; ISSCC 78/Thursday, Feb. 16, 1978.
Akazawa et al., "A High-Speed 1600'Gate Bipolar LSI Processor"; ISSCC 78/Friday, Feb. 17, 1978; IEEE Solid-State Circuits Conference.

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