Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate
2011-03-01
2011-03-01
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
C257SE21546, C257SE29197, C438S424000
Reexamination Certificate
active
07897996
ABSTRACT:
A semiconductor device includes: an insulating film provided on a back surface of a semiconductor substrate; a plurality of isolation regions provided to reach the insulating film from a main surface of the semiconductor substrate; at least a first semiconductor layer and a second semiconductor layer which are electrically insulated from each other by the isolation regions in the semiconductor substrate; a first voltage applied terminal electrically connected to a front surface of the first semiconductor layer; a second voltage applied terminal electrically connected to a front surface of the second semiconductor layer; a selector circuit receiving voltages from the first voltage applied terminal and the second voltage applied terminal, and supplying an output in accordance with a combination of the voltages; and a conductive layer provided so as to contact with the insulating film provided to the back side of the semiconductor substrate.
REFERENCES:
patent: 4225878 (1980-09-01), Dobkin
patent: 2006/0172466 (2006-08-01), Shiba
patent: 08-055961 (1996-02-01), None
Honna Katsu
Jinnai Atsushi
Tashibu Masakazu
Dickey Thomas L
Erdem Fazli
Kabushiki Kaisha Toshiba
Turocy & Watson LLP
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