Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2011-07-12

2011-07-12

Mandala, Victor (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Semiconductor is an oxide of a metal or copper sulfide

C257S369000, C257SE27062, C257SE21633

Reexamination Certificate

active

07977675

ABSTRACT:
A metallic oxide semiconductor device with high performance and small variations. It is a field effect transistor using a metallic oxide film for the channel, which includes a channel region and a source region and comprises a drain region with a lower oxygen content than the channel region in the metallic oxide, in which the channel region exhibits semiconductor characteristics and the oxygen content decreases with depth below the surface.

REFERENCES:
patent: 2007/0054507 (2007-03-01), Kaji et al.
patent: 2008/0073653 (2008-03-01), Iwasaki
patent: 2008/0197350 (2008-08-01), Park et al.
patent: 2009/0167974 (2009-07-01), Choi et al.
patent: 2007-073699 (2007-03-01), None
patent: 2007-250983 (2007-09-01), None
patent: WO 2007/119386 (2007-10-01), None

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