Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2011-04-19
2011-04-19
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S396000, C257SE21011, C257SE21208, C257SE21664
Reexamination Certificate
active
07927891
ABSTRACT:
A lower electrode film is formed above a semiconductor substrate first, and then a ferroelectric film is formed on the lower electrode film. After that, an upper electrode film is formed on the ferroelectric film. When forming the upper electrode, an IrOxfilm containing crystallized small crystals when formed is formed on the ferroelectric film first, and then an IrOxfilm containing columnar crystals is formed.
REFERENCES:
patent: 6146906 (2000-11-01), Inoue et al.
patent: 6624458 (2003-09-01), Takamatsu et al.
patent: 6740533 (2004-05-01), Takamatsu et al.
patent: 6744085 (2004-06-01), Maruyama et al.
patent: 2002/0117700 (2002-08-01), Fox
patent: 2002/0185668 (2002-12-01), Takamatsu et al.
patent: 2003/0080363 (2003-05-01), Maruyama et al.
patent: 2003/0213986 (2003-11-01), Takamatsu et al.
patent: 2004/0023417 (2004-02-01), Cross
patent: 1253627 (2002-10-01), None
patent: 1263037 (2002-12-01), None
patent: 2341726 (2000-03-01), None
patent: 2000-091270 (2000-03-01), None
patent: 2001-127262 (2001-05-01), None
patent: 2002-064186 (2002-02-01), None
patent: 2002-110934 (2002-04-01), None
patent: 2002-134710 (2002-05-01), None
patent: 2002-261251 (2002-09-01), None
patent: 2002-324894 (2002-11-01), None
patent: 2003-133531 (2003-05-01), None
Japanese Office Action mailed Feb. 9, 2010, issued in corresponding Japanese Application No. 2004-253093 (Partial Translation).
Inoue et al., “Smart Fabrication Process of an Ir-IrOx Top-Electrode on a PZT Film for Reliable FeRAM”, Journal of the Electrochemical Society, 151, pp. GI 13-GI 18, (2004).
Office Action dated Apr. 6, 2007 issued in corresponding China Application No. 2004 10082004.5.
European Search Report dated May 7, 2007, issued in corresponding European Patent Application No. 04258145.
Callister, W., Materials Science and Engineering: An Introduction, 3rd Edition, 1994, 3.15 X-Ray Diffraction: Determination of Crystal Structures, pp. 52-56.
Korean Office Action dated Nov. 28, 2006 (mailing date), issued in corresponding Korean Patent Application No. 10-2004-0116537 with partial English translation.
P. Heremans et al., “Differential Optical PnpN Switch Operationg at 16 MHz with 250-fJ Optical Input Energy”, Appl. Phys. Ltr. vol. 65, No. 1, Jul. 4, 1994, pp. 19-21.
Fujitsu Semiconductor Limited
Taylor Earl N
Vu David
Westerman Hattori Daniels & Adrian LLP
LandOfFree
Semiconductor device and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2629664