Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

1981-08-07

1984-01-17

Saba, W. G.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29580, 29590, 148175, 357 23, 357 67, 357 71, 427 84, 427 88, 427 91, 4272554, H01L 2186, H01L 2188

Patent

active

044257007

ABSTRACT:
The method of manufacture of a semiconductor device having wirings or electrodes of silicide formed by: exposing parts of a single-crystal silicon layer formed on an insulating substrate, forming a film of metal over the exposed parts, and annealing so that a silicide is formed of the silicon and metal throughout the entire thickness of the silicon layer. The single-crystal silicon layer may be formed on a sapphire or spinel substrate having a film of silicon dioxide, sapphire or spinel, epitaxially grown on a silicon substrate.

REFERENCES:
patent: 3749614 (1973-07-01), Boleky et al.
patent: 3753774 (1973-08-01), Veloric
patent: 3777364 (1973-12-01), Schinella et al.
patent: 4080719 (1978-03-01), Wilting
patent: 4102733 (1978-07-01), De La Moneda et al.
patent: 4276688 (1981-07-01), Hsu
patent: 4336550 (1982-06-01), Medwin
Kircher et al., "Interconnection Method for Integrated Circuits", I.B.M. Tech. Discl. Bull., vol. 13, No. 2, Jul. 1970, p. 436.

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