Semiconductor device and method for manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means

Reexamination Certificate

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Details

C257S314000, C257S315000, C257S321000

Reexamination Certificate

active

08030732

ABSTRACT:
A semiconductor device which has a semiconductor substrate, an isolation insulating film formed in the semiconductor substrate, a conductive pattern formed over the semiconductor substrate and the isolation insulating film, so that a side face of the conductive pattern is formed over the isolation insulating film, and an insulating film is formed over the isolation insulating film, the conductive pattern and the side face of the conductive pattern, and the side face of the conductive pattern comprises a notch.

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patent: 6417047 (2002-07-01), Isobe
patent: 6437411 (2002-08-01), Choi et al.
patent: 6448606 (2002-09-01), Yu et al.
patent: 6541320 (2003-04-01), Brown et al.
patent: 6875668 (2005-04-01), Nguyen et al.
patent: 9-307083 (1997-11-01), None
patent: 2005-530357 (2005-10-01), None
patent: 2004/001824 (2003-06-01), None

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