Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2010-05-24
2011-12-13
Wilson, Allan R (Department: 2815)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C257S306000, C257S765000, C257SE21011
Reexamination Certificate
active
08076212
ABSTRACT:
According to the method for manufacturing a semiconductor device, a surface of a lower insulating film (55) is planarized by CMP or the like, and an upper insulating film (56) and a protective metal film (59) are formed on the lower insulating film (55). Accordingly, the upper insulating film (56) and the protective metal film (59) are formed in such a manner they have an excellent coverage and the water/hydrogen blocking capability of the upper insulating film (56) and the protective metal film (59) is maximized.
REFERENCES:
patent: 5438023 (1995-08-01), Argos, Jr. et al.
patent: 5523595 (1996-06-01), Takenaka et al.
patent: 6278148 (2001-08-01), Watanabe et al.
patent: 6635918 (2003-10-01), Narui et al.
patent: 6673672 (2004-01-01), Sashida
patent: 7157734 (2007-01-01), Tsao et al.
patent: 7221015 (2007-05-01), Ando et al.
patent: 7288799 (2007-10-01), Saigoh et al.
patent: 7675139 (2010-03-01), Nomura et al.
patent: 7679123 (2010-03-01), Oh et al.
patent: 2004/0113190 (2004-06-01), Oh et al.
patent: 2007/0063241 (2007-03-01), Sashida et al.
patent: 2007/0077700 (2007-04-01), Lin et al.
patent: 2007/0145452 (2007-06-01), Oh et al.
patent: 01-214126 (1989-08-01), None
patent: 03-195025 (1991-08-01), None
patent: 04-102367 (1992-04-01), None
patent: 07-135203 (1995-05-01), None
patent: 08-055850 (1996-02-01), None
patent: 2000-091516 (2000-03-01), None
patent: 2000-277713 (2000-10-01), None
patent: 2000-340653 (2000-12-01), None
patent: 2005-175204 (2005-06-01), None
International Search Report of PCT/JP2005/012404, date of mailing Oct. 25, 2005.
Notification Concerning Transmittal of International Preliminary Report on Patentability (PCT/IB/338) dated Jan. 17, 2008, with Forms PCT/IB/326 and PCT/IB/373 issued in corresponding International application No. PCT/JP2005/012404 filed Jul. 5, 2005, with English translation of Written Opinion of the International Searching Authority (Form PCT/ISA/237).
Nagai Kouichi
Takahashi Makoto
Fujitsu Semiconductor Limited
Westerman Hattori Daniels & Adrian LLP
Wilson Allan R
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