Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – Mesa structure
Reexamination Certificate
2009-03-11
2011-10-11
Thomas, Tom (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
Mesa structure
C257S327000, C257S347000, C257S401000, C257S618000, C257SE21704
Reexamination Certificate
active
08035199
ABSTRACT:
A semiconductor device has a semiconductor substrate, a semiconductor fin which is formed on the semiconductor substrate, which has a long side direction and a short side direction, and which has a carbon-containing silicon film including an impurity and a silicon film formed on the carbon-containing silicon film, a gate electrode which is formed to face both side surfaces of the semiconductor fin in the short side direction, source and drain regions which are respectively formed in the semiconductor fin located in the direction of both sides in the long side direction of the semiconductor fin so as to sandwich the gate electrode, and an element isolation insulating film which is formed on the side surface of the semiconductor fin and between the gate electrode and the semiconductor substrate.
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patent: 5315143 (1994-05-01), Tsuji
patent: 7473964 (2009-01-01), Izumida
patent: 2005/0224800 (2005-10-01), Lindert et al.
patent: 2007/0221956 (2007-09-01), Inaba
patent: 2007-258485 (2007-10-01), None
Aoki Nobutoshi
Izumida Takashi
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Rodela Eduardo A
Thomas Tom
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