Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With base region having specified doping concentration...
Reexamination Certificate
2007-07-25
2010-12-14
Doan, Theresa T (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With base region having specified doping concentration...
C257S197000, C438S350000
Reexamination Certificate
active
07851890
ABSTRACT:
By a non-selective epitaxial growth method, an SiGe film is grown on the whole surface of a silicon oxide film so as to cover an inner wall of a base opening. Here, such film forming conditions are selected that, inside the base opening, a bottom portion is formed of single crystal, other portions such as a sidewall portion are formed of polycrystalline, and a film thickness of the sidewall portion is less than or equal to 1.5 times the film thickness of the bottom portion. In this non-selective epitaxial growth, monosilane, hydrogen, diborane, and germane are used as source gases. Then, flow rates of monosilane and hydrogen are set to 20 sccm and 20 slm respectively. Also, a growth temperature is set to 650° C., a flow rate of diborane is set to 75 sccm, and a flow rate of germane is set to 35 sccm.
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Sato Hidekazu
Wakabayashi Toshihiro
Doan Theresa T
Fujitsu Semiconductor Limited
Westerman Hattori Daniels & Adrian LLP
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