Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2007-12-10

2010-10-26

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S192000, C257S194000, C257S347000, C257SE21445, C257SE21453, C257SE29255, C438S151000, C438S167000, C438S172000, C438S197000, C438S570000

Reexamination Certificate

active

07821036

ABSTRACT:
A semiconductor device (10) comprises a substrate (11), a semiconductor layer (12), an insulation film (13), a protective film (15), a source electrode (21), a drain electrode (22), a gate electrode (23). The semiconductor device (10) comprises a protective film (15) formed so as to cover at least an upper surface of the insulation film (13). This enables preventing aluminum contained in the source electrode (21) and the drain electrode (22) from reacting with material contained in the insulation film (13). Accordingly, the increase of the resistance of the electrode and the increase of current collapse are prevented. Accordingly, the semiconductor device (10) has a satisfactory electric performance characteristics.

REFERENCES:
patent: 6867078 (2005-03-01), Green et al.
patent: 7524709 (2009-04-01), Ishikawa et al.
patent: 7645655 (2010-01-01), Watanabe et al.
patent: 2001/0019879 (2001-09-01), Kravtchenko et al.
patent: 2009/0093116 (2009-04-01), Wu
patent: 09-008407 (2007-01-01), None

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