Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2008-12-08
2010-10-12
Lebentritt, Michael S (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S081000, C257S429000, C257S433000, C257S458000, C257S465000, C257SE27125, C257SE31011, C257SE31038, C257SE31055, C257SE31086
Reexamination Certificate
active
07812355
ABSTRACT:
An object of the present invention is to provide a method for manufacturing a semiconductor device having a semiconductor element capable of reducing a cost and improving a throughput with a minute structure, and further, a method for manufacturing a liquid crystal television and an EL television. According to one feature of the invention, a method for manufacturing a semiconductor device comprises the steps of: forming a light absorption layer over a substrate, forming a first region over the light absorption layer by using a solution, generating heat by irradiating the light absorption layer with laser light, and forming a first film pattern by heating the first region with the heat.
REFERENCES:
patent: 4076575 (1978-02-01), Chang
patent: 4400409 (1983-08-01), Izu et al.
patent: 5142079 (1992-08-01), Chiba et al.
patent: 5303072 (1994-04-01), Takeda et al.
patent: 5467882 (1995-11-01), Ahn
patent: 5477360 (1995-12-01), Sunohara et al.
patent: 5512514 (1996-04-01), Lee
patent: 5696011 (1997-12-01), Yamazaki et al.
patent: 5852488 (1998-12-01), Takemura
patent: 5892562 (1999-04-01), Yamazaki et al.
patent: 5962192 (1999-10-01), Holman, III et al.
patent: 6080606 (2000-06-01), Gleskova et al.
patent: 6132800 (2000-10-01), Shimada et al.
patent: 6177710 (2001-01-01), Nishikata et al.
patent: 6224667 (2001-05-01), Kato
patent: 6225750 (2001-05-01), Kimura
patent: 6294313 (2001-09-01), Kobayashi et al.
patent: 6313435 (2001-11-01), Shoemaker et al.
patent: 6337731 (2002-01-01), Takemura
patent: 6350405 (2002-02-01), Horine
patent: 6399257 (2002-06-01), Shirota et al.
patent: 6416583 (2002-07-01), Kitano et al.
patent: 6503831 (2003-01-01), Speakman
patent: 6552405 (2003-04-01), Sugawara et al.
patent: 6627263 (2003-09-01), Kitano et al.
patent: 6630274 (2003-10-01), Kiguchi et al.
patent: 6673680 (2004-01-01), Calafut
patent: 6715871 (2004-04-01), Hashimoto et al.
patent: 6734029 (2004-05-01), Furusawa
patent: 6807213 (2004-10-01), Shimoyama et al.
patent: 6810814 (2004-11-01), Hasei
patent: 6875996 (2005-04-01), Nakamura
patent: 6936532 (2005-08-01), Sakaida
patent: 6957608 (2005-10-01), Hubert et al.
patent: 7018779 (2006-03-01), Li et al.
patent: 7045438 (2006-05-01), Yamazaki et al.
patent: 7122954 (2006-10-01), Nozawa
patent: 7131194 (2006-11-01), Hashimoto
patent: 7164455 (2007-01-01), Takagi et al.
patent: 7176040 (2007-02-01), Sirringhaus et al.
patent: 7176069 (2007-02-01), Yamakazi et al.
patent: 7189654 (2007-03-01), Yamazaki et al.
patent: 7208401 (2007-04-01), Nelson et al.
patent: 7252923 (2007-08-01), Kobayashi
patent: 7273773 (2007-09-01), Yamazaki et al.
patent: 7300686 (2007-11-01), Morii et al.
patent: 7364769 (2008-04-01), Yoshida et al.
patent: 7365805 (2008-04-01), Maekawa et al.
patent: 7435515 (2008-10-01), Kobayashi et al.
patent: 7449372 (2008-11-01), Fujii et al.
patent: 7462514 (2008-12-01), Shiroguchi et al.
patent: 7470604 (2008-12-01), Fujii
patent: 7476572 (2009-01-01), Morisue et al.
patent: 7510893 (2009-03-01), Yamazaki et al.
patent: 7569334 (2009-08-01), Kobayashi et al.
patent: 7575845 (2009-08-01), Kobayashi et al.
patent: 7585783 (2009-09-01), Nakamura et al.
patent: 7615488 (2009-11-01), Maekawa et al.
patent: 7625493 (2009-12-01), Yamazaki
patent: 7642038 (2010-01-01), Fujii
patent: 2001/0035926 (2001-11-01), Yamaguchi et al.
patent: 2001/0045974 (2001-11-01), Shoemaker et al.
patent: 2002/0079832 (2002-06-01), Van Tongeren et al.
patent: 2002/0094604 (2002-07-01), Hayama et al.
patent: 2002/0136829 (2002-09-01), Kitano et al.
patent: 2002/0146893 (2002-10-01), Shimoda et al.
patent: 2002/0158259 (2002-10-01), Ono et al.
patent: 2003/0017303 (2003-01-01), Shindo et al.
patent: 2003/0030689 (2003-02-01), Hashimoto et al.
patent: 2003/0083203 (2003-05-01), Hashimoto et al.
patent: 2003/0129321 (2003-07-01), Aoki
patent: 2003/0215634 (2003-11-01), Hattori et al.
patent: 2004/0241897 (2004-12-01), Rhee et al.
patent: 2004/0253896 (2004-12-01), Yamazaki
patent: 2004/0266073 (2004-12-01), Yamazaki
patent: 2005/0003645 (2005-01-01), Hirai
patent: 2005/0013927 (2005-01-01), Yamazaki
patent: 2005/0043186 (2005-02-01), Maekawa et al.
patent: 2005/0112810 (2005-05-01), Kobayashi
patent: 2005/0147766 (2005-07-01), Aoki
patent: 2005/0158665 (2005-07-01), Maekawa et al.
patent: 2005/0196710 (2005-09-01), Shiroguchi
patent: 2005/0196711 (2005-09-01), Shiroguchi et al.
patent: 2005/0287721 (2005-12-01), Yamamoto et al.
patent: 2006/0040435 (2006-02-01), Morisue et al.
patent: 2006/0043518 (2006-03-01), Nakaji et al.
patent: 2006/0141619 (2006-06-01), Hattori et al.
patent: 2007/0093002 (2007-04-01), Maekawa et al.
patent: 2007/0207274 (2007-09-01), Fujii
patent: 2007/0267953 (2007-11-01), Seki
patent: 2007/0295396 (2007-12-01), Takahashi et al.
patent: 2008/0001538 (2008-01-01), Cok
patent: 2008/0315428 (2008-12-01), Fujii
patent: 1088315 (1994-06-01), None
patent: 1 087 428 (2001-03-01), None
patent: 54-045102 (1979-04-01), None
patent: 08-062445 (1996-03-01), None
patent: 09-260808 (1997-10-01), None
patent: 11-207959 (1999-08-01), None
patent: 11-251259 (1999-09-01), None
patent: 2000-188251 (2000-07-01), None
patent: 2001-179167 (2001-07-01), None
patent: 2001-272526 (2001-10-01), None
patent: 2003-0059940 (2003-02-01), None
patent: WO 00/28604 (2000-05-01), None
patent: WO 00/59014 (2000-10-01), None
Kuwahara, et al., “Thermal Lithography for 0.1 μm Pattern Fabrication”, Micro Electronic Engineering, 2002, vol. 61-62, pp. 415-421.
Office Action (Application No. 200510069742.0; CN7749) Dated Apr. 25, 2008.
Chinese Office Action (Application No. 200510069742.0; CN7749) Dated May 8, 2009).
Shiroguchi Hiroko
Yamamoto Yoshiaki
Costellia Jeffrey L.
Lebentritt Michael S
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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