Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond
Reexamination Certificate
2008-07-28
2009-08-11
Clark, S. V (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Ball or nail head type contact, lead, or bond
C257S738000
Reexamination Certificate
active
07573140
ABSTRACT:
A semiconductor device includes: a semiconductor substrate that has an integrated circuit; a plurality of electrodes that is formed on the semiconductor substrate, the plurality of the electrodes being electrically coupled to the integrated circuit; a passivation film that is formed on the semiconductor substrate, the passivation film having an opening on at least a part of one of the plurality of electrodes; a resin protrusion that is disposed on the passivation film; and a plurality of wiring lines that extend to a surface of the resin protrusion, each of the plurality of wiring lines extending from one of the plurality of the electrodes, a first portion of each of the plurality of wiring lines being positioned at an uppermost edge of the resin protrusion, a second portion of each of the plurality of wiring lines being positioned between one of the plurality of electrodes and the uppermost edge of the resin protrusion, a width of the first portion of each of the plurality of wiring lines being narrower than a width of at least a part of the second portion of each of the plurality of wiring lines.
REFERENCES:
patent: 2007/0001200 (2007-01-01), Imai et al.
patent: 2007/0029652 (2007-02-01), Asakawa et al.
patent: 2007/0057371 (2007-03-01), Hashimoto
patent: 2007/0063345 (2007-03-01), Hashimoto
patent: 2007/0108607 (2007-05-01), Hashimoto
patent: 2009/0032944 (2009-02-01), Tanaka et al.
patent: 2009/0057924 (2009-03-01), Imai
patent: 2005-353983 (2005-12-01), None
Clark S. V
Harness & Dickey & Pierce P.L.C.
Seiko Epson Corporation
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