Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2005-12-21

2009-08-18

Coleman, W. David (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

C257S797000, C257SE23179

Reexamination Certificate

active

07575980

ABSTRACT:
A semiconductor device and a method manufacturing the same prevents copper from being exposed to a surface of a passivation film after a copper metal line formation, to avoid contamination of processing equipment and the process environment. The method includes providing a substrate with a scribe lane and a chip area in which metal wiring layers are formed, forming a dielectric film, forming a conductive film on the dielectric film in a chip area and an alignment mark on the dielectric film in a scribe lane, forming passivation films, exposing the conductive film by removing the passivation films in a bonding pad portion in a chip area, forming another conductive film in the bonding pad portion to electrically connect with the conductive film, forming another passivation film, and selectively removing the passivation films.

REFERENCES:
Wolf, S. “Silicon Processing for the VLSI Era”, vol. 2: Process Integration, 1990, pp. 273-274.

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