Semiconductor device and method for manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C438S391000, C257SE27048, C257SE29346

Reexamination Certificate

active

11264023

ABSTRACT:
Disclosed is a metal-insulator-metal (MIM) capacitor structure formed by a metal interconnection process of trench-exposed metal layers formed on stacked interlayer insulating layers. The MIM capacitor uses a conductive layer conformally formed on the metal interconnection and/or trench regions to enlarge constituent electrode surface areas.

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patent: 6569746 (2003-05-01), Lee et al.
patent: 6597032 (2003-07-01), Lee
patent: 6847077 (2005-01-01), Thomas et al.
patent: 6897508 (2005-05-01), Sneh
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patent: 7214957 (2007-05-01), Ryoo et al.
patent: 7230292 (2007-06-01), Graettinger
patent: 2004/0137693 (2004-07-01), Kim
patent: 2003-045967 (2003-02-01), None
patent: 1020030049000 (2003-06-01), None
patent: 1020040059410 (2004-07-01), None
patent: 498528 (2002-08-01), None

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