Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1994-05-25
1996-03-19
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257763, 257764, 257768, H01L 3106
Patent
active
055005594
ABSTRACT:
In a semiconductor device and a method for manufacturing the same according to the present invention, for example, an insulating film is deposited on a silicon substrate, and a concave groove is formed in the insulating film in accordance with a predetermined wiring pattern. Titanium and palladium are deposited in sequence on the insulating film to form a titanium film and a palladium film, respectively. A silver film is formed on the palladium film by electroplating, and a groove-shaped silver wiring layer is formed by polishing. The resultant structure is annealed at a temperature of about 700.degree. C., and an intermetallic compound is formed by alloying the titanium film and palladium film with each other. Consequently, a burying type wiring layer whose resistance is lower than that of aluminum, is constituted by the silver wiring layer and intermetallic compound.
REFERENCES:
patent: 4082568 (1977-05-01), Lindmayer
patent: 5045481 (1991-09-01), Schilling et al.
patent: 5240497 (1993-08-01), Shacham et al.
Patent Abstracts of Japan, vol. 5, No. 159 (E-77) Oct. 14, 1991 & JP-A-56 088 339 (Hitachi Ltd).
Patent Abstracts of Japan, vol. 15, No. 118 (E-1048) Mar. 22, 1991 & JP-A-03 008 337 (Fujitsu).
J. Electrochem. Soc., vol. 138, No. 12, Dec. 1991 pp. 3618-3624.
Ezawa Hirokazu
Ikeda Yukio
Inoue Hiroaki
Miyata Masahiro
Ogure Naoaki
Ebara Corporation
Kabushiki Kaisha Toshiba
Monin, Jr. Donald L.
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